[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-6] Geometric surface structure of high-dose implanted/annealed SiC

〇Kotaro Ishiji¹, Makoto Arita², Mariko Adachi³, Yuichi Wada⁴, Yasuhiro Yamada⁴, Tsutomu Araki⁴ (1.SAGA-LS, 2.Kyushu Univ., 3.Nanophoton, 4.Ritsumeikan Univ.)

Keywords:Silicon Carbide, Implanted layer structure, Transmission electron microscopy

The geometric surface pattern like stipes was formed in the high-dose implanted/annealed 4H-SiC, despite the carbon coating on the surface during annealing. To ascertain the cause of this unique surface structure, the structure of the implanted layer was investigated using deep UV Raman spectroscopy and transmission electron microscopy. As a result, the implanted layer was a mixed structure of 3C-twin SiC and amorphous-SiC. The mixed structure is considered to have caused the geometric structure of the surface.