[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-8] Formation of asymmetric silicon tilt boundaries acting as dislocation sources

〇Yutaka Ohno¹, Hikaru Saito², Liang Jianbo³, Tatsuya Yokoi⁴, Katsuyuki Matsunaga⁴, Naoteru Shigekawa³, Koji Inoue¹, Yasuyoshi Nagai¹, Satoshi Hata⁵ (1.IMR, Tohoku Univ., 2.IMCE, Kyushu Univ., 3.GSE, OMU, 4.GSE, Nagoya Univ., 5.IGSES, Kyushu Univ.)

Keywords:aymmetric grain boundary, silicon, dislocation sources

Asymmetric tilt boundaries acting as dislocation sources, generated frequently during the cast-growth of silicon ingots, have a large unit cell structure composed of lower-order twin boundaries. We try to observe in-situ the formation process of the unit cell by high-temperature scanning transmission electron microsopy, with an artificial tilt boundary fabricated by surface activated bonding.