Analysis of Passivation Effect on SiO<sub>2</sub>/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

Ryosuke Okuyama; Takeshi Kadono; Ayumi Masada; Akihiro Suzuki; Koji Kobayashi; Satoshi Shigematsu; Ryo Hirose; Yoshihiro Koga; Kazunari Kurita

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Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Mar 15, 2023 9:00 AM - 12:00 PM D511 (Building No. 11)

Atsuhiko Fukuyama(Miyazaki Univ.), Haruo Sudo(GlobalWafers)

11:30 AM - 11:45 AM

[15a-D511-10] Analysis of Passivation Effect on SiO₂/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:Hydrogen, passivation

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Presentation information

[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-10] Analysis of Passivation Effect on SiO2/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

[15a-D511-10] Analysis of Passivation Effect on SiO₂/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer