[15p-D704-1~8] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

[15p-D704-1] Effect of B-doping on the dielectric tensors of ferrimagnetic Mn₄N thin films

〇Hotaka Sakaguchi¹, Shinji Isogami², Makoto Niimi¹, Takayuki Ishibashi¹ (1.Nagaoka Univ. of Tech., 2.NIMS)

Keywords:dielectric tensor, nitride, magnetic thin film

Mn₄N thin films have attracted attention in the recent Mn-N based spintronics because of high perpendicular magnetic anisotropy and low saturation magnetization, which are required for highly efficient current-induced magnetization switching. We have found that the topological spin structure can be efficiently tailored by a small amount of light element, B. These results originate from the effect of p-d hybridization between B and Mn. In this study, we evaluated the spectral dependence of the magneto-optical effect and dielectric tensor of Mn₄N thin films on the B content to clarify the p-d hybridization effects of light elements.