[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [15p-E102-5] Thin Film Transistors with High-Mobility In₂O₃ Thin Films that Fabricated under High-Base Pressure as Active Layers

〇Prashant Ghediya¹, Yusaku Magari¹, Hui Yang^1,2, Yuqiao Zhang³, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.Beijing Jiaotong Univ., 3.Jiangsu Univ.)

Keywords:Transparent oxide semiconductor devices, Electric field thermopower modulation

Very recently, we found that polycrystalline In₂O₃ films fabricated by pulsed laser deposition (PLD) under relatively high base pressures (1.0 × 10⁻³ Pa) showed extremely high Hall mobility (112.5 cm² V⁻¹ s⁻¹) after annealing at 200 °C in vacuum. In this study, we fabricated thin film transistors (TFTs) using the high-mobility In₂O₃ films as the active channel and achieved ~80 cm² V⁻¹ s⁻¹ field effect mobility (μ_FE). Although the μ_FE is lower than that demonstrated by Magari et al. (μ_FE = 139 cm² V⁻¹ s⁻¹), we believe that the μ_FE would be improved by further optimization of base pressure of PLD chamber.