Keywords:Transparent oxide semiconductor devices, Electric field thermopower modulation
Very recently, we found that polycrystalline In2O3 films fabricated by pulsed laser deposition (PLD) under relatively high base pressures (1.0 × 10−3 Pa) showed extremely high Hall mobility (112.5 cm2 V−1 s−1) after annealing at 200 °C in vacuum. In this study, we fabricated thin film transistors (TFTs) using the high-mobility In2O3 films as the active channel and achieved ~80 cm2 V−1 s−1 field effect mobility (μFE). Although the μFE is lower than that demonstrated by Magari et al. (μFE = 139 cm2 V−1 s−1), we believe that the μFE would be improved by further optimization of base pressure of PLD chamber.