3:00 PM - 3:15 PM
[15p-E102-7] In5GaZnO10 thin-film transistors fabricated by sputtering deposition
Keywords:InGaZnO, In5GaZnO10, Oxide Thin-Film Transistor
Recently, InGaZnO has attracted attention as a semiconductor material for thin-film transistors (TFTs) to replace amorphous silicon (a-Si) and poly silicon (poly Si), and further mobility improvement in InGaZnO TFTs is required. In this study, we fabricated TFTs with sputtered In5GaZnO10 as the channel layer and investigated their characteristics. Especially, we report on the effects of preservation in air.
Enter the password.