[15p-E502-1~8] Research and Development Trends in Polycrystalline Thin-Film Solar Cells

[15p-E502-1] The Annealing Method after ion implantation for nm-scale dopant rich region
for resonant light absorption

〇Isamu Jonoshita¹ (1.personal participate)

Keywords:photovoltaics, ion implantation, anneal

Photovoltaics with nm-scale dopant-rich regions is one of the quantum dot-type solar cells. A patented method of implanting P ions into the Si crystal to form such region has been considered, but after ion implantation, P diffuses by normal annealing and such region cannot be maintained. In this presentation, we consider the characteristics of ion implantation for this region and the role of PI pairs (pair-compounds of P and interstitial Si ) for the transfer of P, and consider an annealing method that does not change the distribution of P.