[15p-PA04-1~3] 13.3 Insulator technology

[15p-PA04-2] Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating

〇Di Pu¹, Susumu Horita¹ (1.JAIST)

Keywords:low-temperature, OH group, post-heating

We have been studying the fabrication of low-temperature Si (SiO_x) oxide films using silicone oil (SO) and ozone (O₃), but the film contains a large amount of OH groups that inhibit its insulating properties. With the purpose of reducing the amount of residual OH groups, a post-heating was performed for 5 minutes in situ in the growth chamber after film deposition, and the origin of the increase or decrease in the amount of residual OH groups was investigated. As a result, we found that the effect of post-heat treatment varies greatly depending on the deposition temperature.