Electronic Properties of InSb/Ga<sub>0.22</sub>In<sub>0.78</sub>Sb Composite Channel HEMT Structures

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 15, 2023 4:00 PM - 6:00 PM PA05 (Poster)

4:00 PM - 6:00 PM

〇(B)Tomoki Jinnai¹, Koharu Hatori¹, Reo Ebihara¹, Masamune Oso¹, Ryosuke Kouno¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS)

Keywords:HEMT