[15p-PA05-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15p-PA05-3] Electronic Properties of GaInSb HEMT Structures with Double-Sided Te δ-Doping

〇Masamune Oso¹, Koharu Hatori¹, Reo Ebihara¹, Tomoki Jinnai¹, Ryosuke Kuono¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS)

Keywords:Double-Sided Te Doping