[15p-PA05-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15p-PA05-6] Optoelectrical Characterization of Low-Temperature-MBE-Grown GaAsBi Layers

〇(M1)minato umeda¹, hiroki imabayashi¹, shiojima kenji¹, umenishi tatsuya², tominaga yoriko², yukimune mitsuki³, ishikawa humitaro^3,4, ueda osamu⁵ (1.Univ. of Fukui, 2.Hiroshima Univ., 3.Ehime Univ., 4.Hokkaido Univ., 5.Meiji Univ.)

Keywords:Low-Temperature-MBE-Grown GaAsBi, Optoelectrical Characterization

Low-Temperature-Grown-GaAs can be applied to the photoconductive antennas in terahertz time domain spectroscopy . In this study, we evaluated the LTG-GaAsBi by using the optoelectrical characterization method.