Poster presentation

[15p-PA05-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 15, 2023 4:00 PM - 6:00 PM PA05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

4:00 PM - 6:00 PM

[15p-PA05-1] Theoretical analysis of the mode of incorporation of nitrogen into antimony-coated GaP surfaces.

〇Shun One¹, Masashi Hikosaka¹, Akihiro Wakahara¹, Keisuke Yamane¹ (1.Toyohashi Tech.)

4:00 PM - 6:00 PM

[15p-PA05-2] Electronic Properties of InSb/Ga_0.22In_0.78Sb Composite Channel HEMT Structures

〇(B)Tomoki Jinnai¹, Koharu Hatori¹, Reo Ebihara¹, Masamune Oso¹, Ryosuke Kouno¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS)

4:00 PM - 6:00 PM

[15p-PA05-3] Electronic Properties of GaInSb HEMT Structures with Double-Sided Te δ-Doping

〇Masamune Oso¹, Koharu Hatori¹, Reo Ebihara¹, Tomoki Jinnai¹, Ryosuke Kuono¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS)

4:00 PM - 6:00 PM

[15p-PA05-4] High-Density InAs Quantum Nanowires on Si(111) Substrates by MBE

〇(M1C)Ryusuke Nakagawa¹, Rikuta Watanabe¹, Naoya Miyasita¹, Koichi Yamaguchi¹ (1.Univ. Electro-Comm.)

4:00 PM - 6:00 PM

[15p-PA05-5] Emission wavelength extension of bi-layer InAs quantum dots by controlling the capping rate

〇Koki Okuno¹, Kosuke Iwaide¹, Nobuhiko Ozaki¹ (1.Wakayama Univ.)

4:00 PM - 6:00 PM

[15p-PA05-6] Optoelectrical Characterization of Low-Temperature-MBE-Grown GaAsBi Layers

〇(M1)minato umeda¹, hiroki imabayashi¹, shiojima kenji¹, umenishi tatsuya², tominaga yoriko², yukimune mitsuki³, ishikawa humitaro^3,4, ueda osamu⁵ (1.Univ. of Fukui, 2.Hiroshima Univ., 3.Ehime Univ., 4.Hokkaido Univ., 5.Meiji Univ.)

4:00 PM - 6:00 PM

[15p-PA05-7] Size control of nano-pit formed using Ga oxide

〇Genki Ono¹, Kanji Iizuka¹ (1.NIT)

Oral presentation

[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 16, 2023 9:30 AM - 11:45 AM A205 (Building No. 6)

Masakazu Arai(Univ. of Miyazaki), Yoriko Tominaga(Hiroshima Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 9:45 AM

[16a-A205-1] Selective-area growth of wurtzite InP fin by MOVPE

〇Yuki Azuma¹, Shun Kimura¹, Hironori Gamo¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

9:45 AM - 10:00 AM

[16a-A205-2] Optimization of GaAs nanowire growth conditions by MBE using patterned substrate

〇Kaito Nakama^1,2, Mitsuki Yukimune³, Keisuke Minehisa^1,2, Akio Higo⁴, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ., 4.d.lab, the Univ. of Tokyo)

10:00 AM - 10:15 AM

[16a-A205-3] GaInNAs nanowires grown on 2-inch Si substrate without pre-treatment using MBE

〇Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Kaito Nakama^1,2, Takeru Tanigawa³, Mitsuki Yukimune³, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ.)

10:15 AM - 10:30 AM

▲ [16a-A205-4] Photoluminescence Evolution of Submonolayer Nanostructures at the 2D-3D Transition

〇Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

10:45 AM - 11:00 AM

[16a-A205-5] Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral confinement layers

〇Masahiro Kakuda¹, Natalia Morais¹, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.Univ. of Tokyo)

11:00 AM - 11:15 AM

[16a-A205-6] Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs

〇Yuko Yano¹, Kengo Takamiya¹, Sachie Fujikawa¹, Syuhei Yagi¹, Hiroyuki Yaguchi¹, Masataka Kobayashi², Hidefumi Akiyama² (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

11:15 AM - 11:30 AM

[16a-A205-7] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (1)TEM evaluation of defects in annealed LTG-GaAs_1-xBi_x thin film

〇Osamu Ueda¹, Noriaki Ikenaga², Yukihiro Horita³, Yuto Takagaki³, Fumitaka Nishiyama³, Mitsuki Yukimune⁴, Fumitaro Ishikawa⁵, Yoriko Tominaga³ (1.Meiji Univ., 2.Kanazawa Inst. Tech., 3.Hiroshima Univ., 4.Ehime Univ., 5.Hokkaido Univ.)

11:30 AM - 11:45 AM

[16a-A205-8] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (2)TEM evaluation of defects in GaAs_1-xBi_x thin film obtained by solid-phase epitaxy

Oral presentation

[16p-A301-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 16, 2023 1:30 PM - 3:00 PM A301 (Building No. 6)

Jiro Nishinaga(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[16p-A301-1] [The 53rd Young Scientist Presentation Award Speech] Polycrystalline InGaAs near-infrared absorbing layer for flexible tandem solar cells

〇Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

1:45 PM - 2:00 PM

△ [16p-A301-2] Exploration of complete wetting phenomena of liquid metals and their application to the preparation of thin films of III-V phosphides

〇Ryoji Katsube¹, Susumu Imashuku², Taka Narumi¹, Hideyuki Yasuda¹ (1.Kyoto Univ., 2.IMR, Tohoku Univ.)

2:00 PM - 2:15 PM

[16p-A301-3] Electron Irradiation Examination on GaPN alloys for controlling bonding states in dilute nitride alloys

〇(M2)Kento Hirai¹, Keisuke Yamane¹, Akihiro Wakahara¹, Takeshi Ohshima², Tetsuya Nakamura³, Mitsuru Imaizumi³ (1.Toyohashi Univ.Tech, 2.QST, 3.JAXA)

2:15 PM - 2:30 PM

[16p-A301-4] Growth of InP/GaPN-based type-II quantum dots for photovoltaic

〇(M2)Takeshi Arimoto¹, Akihiro Wakahara¹, Keisuke Yamane¹ (1.Toyohashi tech.)

2:30 PM - 2:45 PM

[16p-A301-5] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on GaAs Substrate with two-step growth InAs buffer

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

2:45 PM - 3:00 PM

▼ [16p-A301-6] Growth and Structural Properties of Low-temperature grown InAs/MnAs Hybrid Structure on GaAs (111)B

〇(D)Tauhidul Islam¹, Masashi Akabori¹ (1.JAIST)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15p-PA05-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15p-PA05-1] Theoretical analysis of the mode of incorporation of nitrogen into antimony-coated GaP surfaces.

[15p-PA05-2] Electronic Properties of InSb/Ga_0.22In_0.78Sb Composite Channel HEMT Structures

[15p-PA05-3] Electronic Properties of GaInSb HEMT Structures with Double-Sided Te δ-Doping

[15p-PA05-4] High-Density InAs Quantum Nanowires on Si(111) Substrates by MBE

[15p-PA05-5] Emission wavelength extension of bi-layer InAs quantum dots by controlling the capping rate

[15p-PA05-6] Optoelectrical Characterization of Low-Temperature-MBE-Grown GaAsBi Layers

[15p-PA05-7] Size control of nano-pit formed using Ga oxide

[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-1] Selective-area growth of wurtzite InP fin by MOVPE

[16a-A205-2] Optimization of GaAs nanowire growth conditions by MBE using patterned substrate

[16a-A205-3] GaInNAs nanowires grown on 2-inch Si substrate without pre-treatment using MBE

▲ [16a-A205-4] Photoluminescence Evolution of Submonolayer Nanostructures at the 2D-3D Transition

[16a-A205-5] Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral confinement layers

[16a-A205-6] Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs

[16a-A205-7] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (1)TEM evaluation of defects in annealed LTG-GaAs_1-xBi_x thin film

[16a-A205-8] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (2)TEM evaluation of defects in GaAs_1-xBi_x thin film obtained by solid-phase epitaxy

[16p-A301-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-A301-1] [The 53rd Young Scientist Presentation Award Speech] Polycrystalline InGaAs near-infrared absorbing layer for flexible tandem solar cells

△ [16p-A301-2] Exploration of complete wetting phenomena of liquid metals and their application to the preparation of thin films of III-V phosphides

[16p-A301-3] Electron Irradiation Examination on GaPN alloys for controlling bonding states in dilute nitride alloys

[16p-A301-4] Growth of InP/GaPN-based type-II quantum dots for photovoltaic

[16p-A301-5] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on GaAs Substrate with two-step growth InAs buffer

▼ [16p-A301-6] Growth and Structural Properties of Low-temperature grown InAs/MnAs Hybrid Structure on GaAs (111)B

Authenticate