[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-8] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (2)TEM evaluation of defects in GaAs_1-xBi_x thin film obtained by solid-phase epitaxy

〇Osamu Ueda¹, Noriaki Ikenaga², Yukihiro Horita³, Yuto Takagaki³, Fumitaka Nishiyama³, Mitsuki Yukimune⁴, Fumitaro Ishikawa⁵, Yoriko Tominaga³ (1.Meiji Univ., 2.Kanazawa Inst. Tech., 3.Hiroshima Univ., 4.Ehime Univ., 5.Hokkaido Univ.)

Keywords:GaAsBi, solid-phase epitaxy, defect

We have structurally evaluated GaAs_1-xBi_x thin film obtained by solid-phase epitaxial growth of amorphous GaAs_1-xBi_x thin film by TEM. When the amorphous film is annealed for 1 h at 350 ^oC, the upper and lower layers correspond to an epitaxial and polycrystalline GaAs_1-xBi_x layers, respectively. As-precipitates, Ga-rich GaAs_1-xBi_x- and Bi-precipitates are generated in the epi/sub interface region. While a precipitate-free GaAs_1-xBi_x thin films were obtained after annealing for 1 h at 600 ^oC, forming a small amount of Ga-rich GaAs_1-xBi_x- and Bi-precipitates only in the region just above the epi/sub interface.