[16p-A301-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-A301-3] Electron Irradiation Examination on GaPN alloys for controlling bonding states in dilute nitride alloys

〇(M2)Kento Hirai¹, Keisuke Yamane¹, Akihiro Wakahara¹, Takeshi Ohshima², Tetsuya Nakamura³, Mitsuru Imaizumi³ (1.Toyohashi Univ.Tech, 2.QST, 3.JAXA)

Keywords:compound semiconductor solar cells, radiation

It is known that electron irradiation of dilute nitrides improves their crystallinity only after irradiation. The PL spectra of dilute nitrides irradiated with electron beams at an acceleration voltage of 2 MeV and an irradiation dose of 1012~1015 cm-2 are shown as a function of irradiation dose, and the mechanism of crystallinity improvement is discussed.