[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

▲ [16a-A205-4] Photoluminescence Evolution of Submonolayer Nanostructures at the 2D-3D Transition

〇Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:submonolayer, InAs, self-assembly

InAs/GaAs nanostructures assembled by stacked submonolayer (SML) growth is one of the promising alternatives to the conventional Stranki-Krastanov (SK) InAs nanostructures. While recent reports have clarified the existence of a transition from 2D (layer-to-layer) to 3D growth regime, the SML transition is still not well understood. In the present report, the time evolution of the SML transition is investigated by introducing a growth interruption before GaAs capping and photoluminescence (PL) measurements. The interruption allows for the growth transition to occur and capping effectively freezes the state of the transition. By varying the interruption time, it is possible to probe the time evolution of the growth transition.