[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-2] Optimization of GaAs nanowire growth conditions by MBE using patterned substrate

〇Kaito Nakama^1,2, Mitsuki Yukimune³, Keisuke Minehisa^1,2, Akio Higo⁴, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ., 4.d.lab, the Univ. of Tokyo)

Keywords:nanowire, MBE, patterned substrate