The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

3 Optics and Photonics » 3.8 Terahertz technologies (formerly 3.9)

[16a-A202-1~4] 3.8 Terahertz technologies (formerly 3.9)

Thu. Mar 16, 2023 10:00 AM - 11:00 AM A202 (Building No. 6)

Yu Tokizane(Tokushima University)

10:15 AM - 10:30 AM

[16a-A202-2] High-power terahertz radiation from cavity-type resonant-tunneling-diode oscillator with reduced conduction loss

Hiroki Tanaka1, Hidenari Fujikata1, Han Feifan1, Akira Ishikawa1, Safumi Suzuki1 (1.Tokyotech)

Keywords:Terahertz (THz), Resonant tunneling diode (RTD)

We proposed a high-power terahertz oscillator using a cavity resonator and a large-area resonant tunneling diode (RTD), and achieved an output power of 0.2 mW at 0.53 THz using RTD layer structure that employs a high thermal conductivity n+-InP conductive layer for heat dissipation. However, n+-InP has low conductivity, which caused increased conduction losses and small output power. In this study, by increasing the thickness of the n+-InP conductive layer and optimizing the resonator structure to reduce the conduction loss, we obtained a high-power oscillation of 0.86 mW at 0.61 THz.