[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[16a-A301-3] Effect of nitrogen introduced in the SiC side on the electronic states
near the SiC/SiO₂ interface by first-principles calculations

〇Keita Tachiki¹, NIshiya Yusuke^1,2, Iwata Jun-ichi^1,2, Matsushita Yu-ichiro^1,2,3 (1.Tokyo Tech, 2.Quemix Inc., 3.QST)

Keywords:SiC