Subthreshold characteristics of 4H-SiC n- and p-channel MOSFETs at low temperature

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

Thu. Mar 16, 2023 9:30 AM - 12:00 PM A301 (Building No. 6)

Takuji Hosoi(Kwansei Gakuin Univ.)

11:15 AM - 11:30 AM

〇Xilun Chi¹, Keita Tachiki¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:MOS, SiC