[16a-A403-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16a-A403-5] Fabrication and Low Temperature Characteristics of Silicon Double Quantum Dots

〇(M2)Junoh Kim¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab, Univ. of Tokyo)

Keywords:quantum dot, single electron transistor