Formation of p-type conductive layer by boron-ion implantation into phosphorus-doped n-type diamond

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

Thu. Mar 16, 2023 9:00 AM - 11:30 AM A408 (Building No. 6)

9:15 AM - 9:30 AM

〇Masahiko Ogura¹, Tomoaki Nishimura², Hiromitsu Kato¹, Daisuke Takeuchi¹, Satoshi Yamasaki¹, Toshiharu Makino¹ (1.AIST, 2.Hosei Univ.)

Keywords:diamond, ion implantation, semiconductor