[16a-B401-1~9] 15.4 III-V-group nitride crystals

△ [16a-B401-6] Polarization Control of Surface Emission from InGaN Quantum Wells by Applying External Uniaxial Stress

〇Keito Mori¹, Atsushi Yamaguchi¹, Maho Ohara², Tomohiro Makino², Rintaro Koda², Tatsushi Hamaguchi² (1.Kanazawa Inst. Tech., 2.Sony)

Keywords:InGaN quantum well, polarization, deformation potential

In this study, to stabilize the polarization of emission in the c-plane InGaN-QW-VCSELs, we introduced anisotropic strain in the in-plane by applying stress. Then, from polarization PL measurements, we demonstrated that optical anisotropy is induced in the c-plane QWs, and furthermore, we obtained knowledge about the deformation potential D5 of InGaN.