[16a-B401-1~9] 15.4 III-V-group nitride crystals

△ [16a-B401-7] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurement for InGaN quantum wells by utilizing Helmholtz resonance

〇Hiroki Tosa¹, Keito Mori-Tamamura¹, Atsushi A. Yamaguchi¹ (1.Kanazawa Inst. Tech)

Keywords:InGaN quantum wells, photoacoustic and photoluminescence measurement, Helmholtz resonance

To elucidate the optical properties of Ⅲ-nitride semiconductors, we have proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurement method that can calculate the internal quantum efficiency by simultaneously measuring the emission due to radiative recombination and the heating due to non-radiative recombination. When performing PA/PL method on InGaN-QWs on GaN substrates, it is necessary to increase the chopper frequency to ignore the heat generated by the substrate, but the PA signal is also reduced. In this study, we propose a method to amplify the PA signal by Helmholtz resonance and air pressurization in order to secure the signal-to-noise ratio at high frequencies.