[16a-B414-1~10] 17.3 Layered materials

△ [16a-B414-5] Self-catalyzed VLS growth of GaS-nanobelt

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:III-VI semiconductor, metalorganic chemical vapor deposition, Gallium sulfide

We obtained GaS-nanobelt by self-catalyzed VLS growth. The cross-sectional TEM image shows that the GaS-nanobelt grows in the direction perpendicular to the zigzag edge. The photocurrent flows by illuminating the light with higher photon energy than the GaS bandgap (~ 2.5 eV). The photocurrent's high on/off ratio (> 7000) was obtained at 400 nm wavelength and 10 V applied voltage.