Oral presentation

[16a-B414-1~10] 17.3 Layered materials

Thu. Mar 16, 2023 9:00 AM - 11:30 AM B414 (Building No. 2)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-B414-1] [The 53rd Young Scientist Presentation Award Speech] Millimeter-scale and Lateral Hetero Growth of Transition Metal Dichalcogenides by Controlled Confined Space of Microreactor

〇Ryoki Hashimoto¹, Masaaki Misawa¹, Kenji Tsuruta¹, Yasumitsu Miyata², Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ., 2.Tokyo Metropolitan Univ.)

9:15 AM - 9:30 AM

[16a-B414-2] Growth mechanism of triangular-shaped, metastable WS₂

〇Mitsuhiro OKADA¹, Toshitaka Kubo¹, Lin Yung-Chang¹, Naoya Okada¹, Chang Wen Hsin¹, Suenaga Kazu^1,2, Yamada Takatoshi¹, Irisawa Toshifumi¹ (1.AIST, 2.Osaka Univ.)

9:30 AM - 9:45 AM

△ [16a-B414-3] WS₂ thin film deposition on Fin structure by low-temperature metal organic chemical vapor deposition

〇(M2)Kirito Cho¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi⁴, Ryo Yokogawa^1,2, Naomi Sawamoto^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Gas-phase Growth Ltd., 4.Tokyo Tech)

9:45 AM - 10:00 AM

▼ [16a-B414-4] Deterministic synthesis of SnS and SnS₂ by chemical vapor deposition

〇(M1)Kazuki Koyama¹, Takamichi Miyazaki¹, Takeshi Odagawa¹, Chaoliang Zhang², Shutaro Karube¹, Makoto Kohda^1,3,4,5 (1.Grad. Sch. of Eng., Tohoku Univ., 2.FRIS, Tohoku Univ., 3.CSIS, Tohoku Univ., 4.FRiD, Tohoku Univ., 5.QUARC, QST)

10:00 AM - 10:15 AM

△ [16a-B414-5] Self-catalyzed VLS growth of GaS-nanobelt

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

10:15 AM - 10:30 AM

△ [16a-B414-6] Effects of gas-phase reactive species on formation of Janus TMD revealed by in-situ
monitoring plasma atomic functionalization

〇Hiroshi Nakajo^1,2, Soma Aoki¹, Yuta Iwamoto¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ., 2.KOUSAI ELECTRIC Corp.)

10:30 AM - 10:45 AM

△ [16a-B414-7] Orientation Control of Reactive Sputtering Grown MoS₂

〇(D)Myeongok Kim^1,2, Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST UTokyo)

10:45 AM - 11:00 AM

[16a-B414-8] In-situ LEEM observation of germanene segregation on Ag(111) thin films

〇Hiroki Hibino¹, Akio Ohta², Hiroyuki Kageshima³, Junji Yuhara² (1.Kwansei Gakuin Univ., 2.Nagoya Univ., 3.Shimane Univ.)

11:00 AM - 11:15 AM

[16a-B414-9] The fabrication and properties of MoS₂ thin film by mist CVD 3

〇(M1)masahiko komatsu¹, Tatsuya Yasuoka¹, Li Liu^1,2, Toshiyuki Kawaharamura^1,2 (1.School of Sys. Eng. Kochi Univ. of Tech., 2.Res. Inst. Kochi Univ. of Tech.)

11:15 AM - 11:30 AM

▲ [16a-B414-10] Synthesis of Few-layer 2D Transition Metal-Dichalcogenides for Electronics and
Optoelectronics: A Prospective of Mist CVD

〇(P)Abdul A Kuddus¹, Kojun Yokoyama², Shinichiro Mouri¹, Hajime Shirai² (1.Ritsumeikan Univ., 2.Saitama Univ.)

Oral presentation

[16p-B414-1~16] 17.3 Layered materials

Thu. Mar 16, 2023 1:00 PM - 5:15 PM B414 (Building No. 2)

Hiroki Hibino(Kwansei Gakuin Univ.), Yusuke Hoshi(Tokyo City Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[16p-B414-1] Fabrication of a simple exfoliation device and examination of the exfoliation rate of MoS₂

〇Takashi Kobayashi¹, Tetsuji Dohi¹, Daisuke Kiriya² (1.Chuo Univ., 2.Univ. of Tokyo)

1:15 PM - 1:30 PM

△ [16p-B414-2] Reaction mechanism of the large-area monolayer MoS₂ via surface electrochemical method

〇Riku Mochizuki^1,2, Takeshi Yoshimura¹, Norifumi Fujimura¹, Daisuke Kiriya² (1.Osaka Metro. Univ., 2.The Univ. of Tokyo)

1:30 PM - 1:45 PM

△ [16p-B414-3] Local deep level transient spectroscopy measurement of MoS₂ mechanically exfoliated on SiO₂ using scanning nonlinear dielectric microscopy

〇Taiyo Ishizuka^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

1:45 PM - 2:00 PM

△ [16p-B414-4] Observation of graphene domain of C-doped monolayer h-BN by c-AFM

〇Jimpei Kawase¹, Supawan Ngamprapawat¹, Tomonori Nishimura¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio¹ (1.Univ. of Tokyo, 2.NIMS)

2:00 PM - 2:15 PM

△ [16p-B414-5] Observation of in-plane polarization domain of ferroelectric SnS thin film by PFM

〇Satsuki Kitamura¹, Ryo Nanae¹, Yih-Ren Chang^1,2, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.UTokyo, 2.RIKEN)

2:15 PM - 2:30 PM

[16p-B414-6] Towards the Mechanism of Crystal Phase Transition of MoS₂ Under X-ray Irradiation

〇(M2)Ryota Tanizawa^1,2, Daisuke Kobayashi², Kazuyuki Hirose^1,2 (1.UTokyo, 2.ISAS)

2:30 PM - 2:45 PM

[16p-B414-7] Analysis of atomic structures of layered WS₂ by neural network potential

〇(M1)Ryuji Otsuka¹, Koji Shimizu¹, Hitoshi Wakabayashi², Satoshi Watanabe¹ (1.UTokyo, 2.Tokyo Tech)

2:45 PM - 3:00 PM

△ [16p-B414-8] Second-order nonlinear optical response of excitons in hBN-encapsulated monolayer transition metal dichalcogenides

〇Shinya Takahshi¹, Satoshi Kusaba¹, Kenji Watanabe², Takashi Taniguchi², Kazuhiro Yanagi³, Koichiro Tanaka^1,4 (1.Kyoto Univ., 2.NIMS, 3.Tokyo Metro. Univ., 4.iCeMS, Kyoto Univ.)

3:15 PM - 3:30 PM

[16p-B414-9] Split gate control of valley current in monolayer MoS₂

〇Kazuki Fukuda¹, Kazushi Yokoi¹, Kei Takahashi¹, Kenji Watanabe², Takashi Taniguchi², Mengnan Ke¹, Nobuyuki Aoki¹ (1.Chiba Univ., 2.NIMS)

3:30 PM - 3:45 PM

▲ [16p-B414-10] Gate Defined Josephson junctions in monolayer WTe₂

Randle Michael¹, Masayuki Hosoda², Russell Deacon¹, Manabu Ohtomo², Kenji Watanabe³, Takashi Taniguchi³, Shota Okazaki⁴, Takao Sasagawa⁴, Kenichi Kawaguchi², Shintaro Sato², 〇Koji Ishibashi¹ (1.RIKEN, 2.Fujitsu, 3.NIMS, 4.TIT)

3:45 PM - 4:00 PM

[16p-B414-11] Detection of Γ-valley states in the valence band of twisted bilayer WSe₂ via resonant tunneling effects

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi³, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.NIMS, 4.CREST-JST)

4:00 PM - 4:15 PM

[16p-B414-12] Electrical characteristics of α-phase Indium selenide

〇Sho Ozaki¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

4:15 PM - 4:30 PM

[16p-B414-13] Defect-assisted tunneling processes in graphene/C-doped h-BN junctions

〇Yuta Seo¹, Yuki Tsuji¹, Kei Kinoshita¹, Momoko Onodera¹, Yijin Zhang¹, Satoru Masubuchi¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi², Tomoki Machida^1,3 (1.IIS Univ. Tokyo, 2.NIMS, 3.CREST-JST)

4:30 PM - 4:45 PM

▲ [16p-B414-14] Energetics and electronic properties of Janus WSSe

〇YANLIN GAO¹, Susumu Okada¹ (1.University of Tsukuba)

4:45 PM - 5:00 PM

[16p-B414-15] Theoretical Studies of Strain Effect on Electronic States of CoBHT

〇(M1)Kento Nishigomi¹, Kumatani Akichika², Tukagoshi Kazuhito³, Wakabayashi Katsunori¹ (1.Kwanisei Univ., 2.Tohoku Univ AIMS, 3.NIMS)

5:00 PM - 5:15 PM

[16p-B414-16] Electronic structure modulation of transition metal dichalcogenide by sumanene column adsorption

〇Mina Maruyama¹, Susumu Okada¹ (1.Univ. of Tsukuba)

Oral presentation

[17a-B414-1~7] 17.3 Layered materials

Fri. Mar 17, 2023 9:00 AM - 10:45 AM B414 (Building No. 2)

Shinichiro Mouri(Ritsumeikan Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-B414-1] Sheet resistance reduction of sputtered WS₂ film by Cl₂ plasma treatment

〇(B)Keita Kuohara¹, Shinya Imai¹, Shigetaka Tomiya¹, Tetsuya Tatsumi¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

9:15 AM - 9:30 AM

[17a-B414-2] Doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on the MoS₂-FET through microfluidic approach

〇Md Nasiruddin¹, Hiroki Waizumi¹, Tsuyoshi Takaoka², Kousuke Sakashita¹, Aoi Sato¹, Atsushi Ando³, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM Tohoku Univ., 3.AIST)

9:30 AM - 9:45 AM

[17a-B414-3] Electrical Property and Photo response in Field-Effect Transistors with Vertically Stacked Heterostructure Channels Made of 2D materials

〇Hiroki Waizumi¹, Tsuyoshi Takaoka², Atsushi Ando³, Nasiruddin Md.¹, Kosuke Sakashita¹, Aoi Sato¹, Mitsuhiro Okada³, Toshitaka Kubo³, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM Tohoku Univ., 3.AIST)

9:45 AM - 10:00 AM

△ [17a-B414-4] The p-type operation of WSe₂ FET with Bi/Au contact by reducing Bi thickness with surface segregation

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ.)

10:00 AM - 10:15 AM

[17a-B414-5] Fabrication of TFET with high performance via laser-induced doping

〇Tianshun Xie¹, Mengnan Ke¹, Keiji Ueno², Nobuyuki Aoki¹ (1.Chiba Univ, 2.Saitama Univ)

10:15 AM - 10:30 AM

△ [17a-B414-6] Observation of electric field sensing in MoS2 electric field sensor

〇(M2)Akihiro Kuki¹, Kareekunnan Afsal¹, kudo Takeshi², Maruyama Takeshi², Mizuta Hiroshi¹ (1.jaist, 2.Otowa Electric Co.)

10:30 AM - 10:45 AM

▲ [17a-B414-7] EOT scaling of top-gate MoS₂ FET below 1 nm

〇(D)Li Shuhong¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. of Tokyo)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[16a-B414-1~10] 17.3 Layered materials

[16a-B414-1] [The 53rd Young Scientist Presentation Award Speech] Millimeter-scale and Lateral Hetero Growth of Transition Metal Dichalcogenides by Controlled Confined Space of Microreactor

[16a-B414-2] Growth mechanism of triangular-shaped, metastable WS₂

△ [16a-B414-3] WS₂ thin film deposition on Fin structure by low-temperature metal organic chemical vapor deposition

▼ [16a-B414-4] Deterministic synthesis of SnS and SnS₂ by chemical vapor deposition

△ [16a-B414-5] Self-catalyzed VLS growth of GaS-nanobelt

△ [16a-B414-6] Effects of gas-phase reactive species on formation of Janus TMD revealed by in-situ
monitoring plasma atomic functionalization

△ [16a-B414-7] Orientation Control of Reactive Sputtering Grown MoS₂

[16a-B414-8] In-situ LEEM observation of germanene segregation on Ag(111) thin films

[16a-B414-9] The fabrication and properties of MoS₂ thin film by mist CVD 3

▲ [16a-B414-10] Synthesis of Few-layer 2D Transition Metal-Dichalcogenides for Electronics and
Optoelectronics: A Prospective of Mist CVD

[16p-B414-1~16] 17.3 Layered materials

[16p-B414-1] Fabrication of a simple exfoliation device and examination of the exfoliation rate of MoS₂

△ [16p-B414-2] Reaction mechanism of the large-area monolayer MoS₂ via surface electrochemical method

△ [16p-B414-3] Local deep level transient spectroscopy measurement of MoS₂ mechanically exfoliated on SiO₂ using scanning nonlinear dielectric microscopy

△ [16p-B414-4] Observation of graphene domain of C-doped monolayer h-BN by c-AFM

△ [16p-B414-5] Observation of in-plane polarization domain of ferroelectric SnS thin film by PFM

[16p-B414-6] Towards the Mechanism of Crystal Phase Transition of MoS₂ Under X-ray Irradiation

[16p-B414-7] Analysis of atomic structures of layered WS₂ by neural network potential

△ [16p-B414-8] Second-order nonlinear optical response of excitons in hBN-encapsulated monolayer transition metal dichalcogenides

[16p-B414-9] Split gate control of valley current in monolayer MoS₂

▲ [16p-B414-10] Gate Defined Josephson junctions in monolayer WTe₂

[16p-B414-11] Detection of Γ-valley states in the valence band of twisted bilayer WSe₂ via resonant tunneling effects

[16p-B414-12] Electrical characteristics of α-phase Indium selenide

[16p-B414-13] Defect-assisted tunneling processes in graphene/C-doped h-BN junctions

▲ [16p-B414-14] Energetics and electronic properties of Janus WSSe

[16p-B414-15] Theoretical Studies of Strain Effect on Electronic States of CoBHT

[16p-B414-16] Electronic structure modulation of transition metal dichalcogenide by sumanene column adsorption

[17a-B414-1~7] 17.3 Layered materials

[17a-B414-1] Sheet resistance reduction of sputtered WS₂ film by Cl₂ plasma treatment

[17a-B414-2] Doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on the MoS₂-FET through microfluidic approach

[17a-B414-3] Electrical Property and Photo response in Field-Effect Transistors with Vertically Stacked Heterostructure Channels Made of 2D materials

△ [17a-B414-4] The p-type operation of WSe₂ FET with Bi/Au contact by reducing Bi thickness with surface segregation

[17a-B414-5] Fabrication of TFET with high performance via laser-induced doping

△ [17a-B414-6] Observation of electric field sensing in MoS2 electric field sensor

▲ [17a-B414-7] EOT scaling of top-gate MoS₂ FET below 1 nm

Authenticate

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[16a-B414-1~10] 17.3 Layered materials

△ [16a-B414-3] WS2 thin film deposition on Fin structure by low-temperature metal organic chemical vapor deposition

▼ [16a-B414-4] Deterministic synthesis of SnS and SnS2 by chemical vapor deposition

△ [16a-B414-5] Self-catalyzed VLS growth of GaS-nanobelt

△ [16a-B414-6] Effects of gas-phase reactive species on formation of Janus TMD revealed by in-situmonitoring plasma atomic functionalization

△ [16a-B414-7] Orientation Control of Reactive Sputtering Grown MoS2

▲ [16a-B414-10] Synthesis of Few-layer 2D Transition Metal-Dichalcogenides for Electronics andOptoelectronics: A Prospective of Mist CVD

[16p-B414-1~16] 17.3 Layered materials

△ [16p-B414-2] Reaction mechanism of the large-area monolayer MoS2 via surface electrochemical method

△ [16p-B414-3] Local deep level transient spectroscopy measurement of MoS2 mechanically exfoliated on SiO2 using scanning nonlinear dielectric microscopy

△ [16p-B414-4] Observation of graphene domain of C-doped monolayer h-BN by c-AFM

△ [16p-B414-5] Observation of in-plane polarization domain of ferroelectric SnS thin film by PFM

△ [16p-B414-8] Second-order nonlinear optical response of excitons in hBN-encapsulated monolayer transition metal dichalcogenides

▲ [16p-B414-10] Gate Defined Josephson junctions in monolayer WTe2

▲ [16p-B414-14] Energetics and electronic properties of Janus WSSe

[17a-B414-1~7] 17.3 Layered materials

△ [17a-B414-4] The p-type operation of WSe2 FET with Bi/Au contact by reducing Bi thickness with surface segregation

△ [17a-B414-6] Observation of electric field sensing in MoS2 electric field sensor

▲ [17a-B414-7] EOT scaling of top-gate MoS2 FET below 1 nm

Authenticate

△ [16a-B414-3] WS₂ thin film deposition on Fin structure by low-temperature metal organic chemical vapor deposition

▼ [16a-B414-4] Deterministic synthesis of SnS and SnS₂ by chemical vapor deposition

△ [16a-B414-6] Effects of gas-phase reactive species on formation of Janus TMD revealed by in-situ
monitoring plasma atomic functionalization

△ [16a-B414-7] Orientation Control of Reactive Sputtering Grown MoS₂

▲ [16a-B414-10] Synthesis of Few-layer 2D Transition Metal-Dichalcogenides for Electronics and
Optoelectronics: A Prospective of Mist CVD

△ [16p-B414-2] Reaction mechanism of the large-area monolayer MoS₂ via surface electrochemical method

△ [16p-B414-3] Local deep level transient spectroscopy measurement of MoS₂ mechanically exfoliated on SiO₂ using scanning nonlinear dielectric microscopy

▲ [16p-B414-10] Gate Defined Josephson junctions in monolayer WTe₂

△ [17a-B414-4] The p-type operation of WSe₂ FET with Bi/Au contact by reducing Bi thickness with surface segregation

▲ [17a-B414-7] EOT scaling of top-gate MoS₂ FET below 1 nm