[16p-B414-1~16] 17.3 Layered materials

[16p-B414-11] Detection of Γ-valley states in the valence band of twisted bilayer WSe₂ via resonant tunneling effects

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi³, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.NIMS, 4.CREST-JST)

Keywords:TMD, twist, resonant tunneling

We measured tunneling current occurring in twisted bilayer WSe₂ (tBL WSe₂)/few-layer h-BN/trilayer WSe₂ tunnel junction. The twist angle between BL WSe₂ was controlled to 0, 2, and 4°. Two peak structures in the I-V curve were commonly observed from all the devices, which were attributed to resonant tunneling into two energy states at Γ point in the valence band of BL WSe₂. However, we detected another peak structure for the twist angle of 2° and 4°. We think this is corresponding to a new energy state in Γ point originated from local stackings in tBL WSe₂.