[16p-B414-1~16] 17.3 Layered materials

[16p-B414-13] Defect-assisted tunneling processes in graphene/C-doped h-BN junctions

〇Yuta Seo¹, Yuki Tsuji¹, Kei Kinoshita¹, Momoko Onodera¹, Yijin Zhang¹, Satoru Masubuchi¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi², Tomoki Machida^1,3 (1.IIS Univ. Tokyo, 2.NIMS, 3.CREST-JST)

Keywords:tunneling transport, hexagonal boron nitride, defect

We observed defect-assisted resonant tunneling in graphene/C-doped h-BN (BN:C)/graphite junctions through defects in BN:C. In devices with thin BN:C barrier, defect-assisted resonant tunneling through one defect is dominant. On the other hand, in devices with thick BN:C barrier, it is suggested that sequential defect-assisted resonant tunneling through two defects is dominant. In each case, we revealed a phonon-assisted inelastic tunneling process in addition to an elastic tunneling process.