[17a-B414-1~7] 17.3 Layered materials

[17a-B414-3] Electrical Property and Photo response in Field-Effect Transistors with Vertically Stacked Heterostructure Channels Made of 2D materials

〇Hiroki Waizumi¹, Tsuyoshi Takaoka², Atsushi Ando³, Nasiruddin Md.¹, Kosuke Sakashita¹, Aoi Sato¹, Mitsuhiro Okada³, Toshitaka Kubo³, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM Tohoku Univ., 3.AIST)

Keywords:Transition Metal Dichalcogenide, Field Effect Transistor, UV-visible Spectroscopy

Field-effect transistors using molybdenum disulfide (MoS₂-FETs) cannot electrically detect adsorbed molecules that absorb light with wavelengths longer than 700 nm. We believe that extending the wavelength range will bring us closer to realizing a practical sensor, and in this study, we focused on the low-energy path discovered by the photoluminescence method in WSe₂/MoS₂ hetero-films. As a first step, we fabricated our own WSe₂/MoS₂-FETs and evaluated their electrical characteristics and optical response performance.