The 70th JSAP Spring Meeting 2023

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17 Nanocarbon Technology » 17.3 Layered materials

[17a-B414-1~7] 17.3 Layered materials

Fri. Mar 17, 2023 9:00 AM - 10:45 AM B414 (Building No. 2)

Shinichiro Mouri(Ritsumeikan Univ.)

9:45 AM - 10:00 AM

△ [17a-B414-4] The p-type operation of WSe2 FET with Bi/Au contact by reducing Bi thickness with surface segregation

〇Ryuichi Nakajima1, Tomonori Nishimura1, Keiji Ueno2, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.Saitama Univ.)

Keywords:TMDC, FLP, Surface segregation

Surface segregation of Bi/Au bilayer system was applied to the operation of WSe2 Schottky FET. Thick Bi film suppressed thermal damage during Au deposition, and after deposition annealing was applied to reduce the thickness of Bi film with surface segregation. With such process, the property of FET was changed from strong n-type to ambipolar.