[16p-B414-1~16] 17.3 Layered materials

△ [16p-B414-3] Local deep level transient spectroscopy measurement of MoS₂ mechanically exfoliated on SiO₂ using scanning nonlinear dielectric microscopy

〇Taiyo Ishizuka^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

Keywords:layered semiconductor, Scanning Nonlinear Dielectric Microscopy

Local deep level transient spectroscopy (DLTS) based on Scanning Nonlinear Dielectric Microscopy (SNDM) was applied to a layered semiconductor, Molybdenum Disulfide (MoS₂). The interface level density (Dit) of MoS₂ was measured using local DLTS, and high Dit was detected at the edge of MoS₂. The above results indicate that SNDM can be used to microscopically observe and evaluate the physical properties of the edges of layered semiconductors.