[16a-D704-1~10] 10.3 Spin devices, magnetic memories and storages

[16a-D704-6] Distribution of write error rates of spin-transfer-torque MRAM

〇Hiroshi Imamura¹, Hiroko Arai¹, Rie Matsumoto¹ (1.AIST)

Keywords:MRAM, write error rate, probability distribution

Spin-transfer-torque magnetoresistive random access memory (STT MRAM) has been attracting much attention as a key component for future low-power electronics because of its useful characteristics such as high integration density, non-volatility, low-latency, and high-endurance. For developing a reliable STT MRAM, it is important to know the probability distribution (PDF) of the write error rate (WER) caused by the variation of physical properties of each memory cell. We derived the PDF of the WER by assuming that the areal resistance and anisotropy constant follow a normal distribution.