Influence of alkali halide insertions on magnetic anisotropy

Jieyi Chen; Shoya Sakamoto; Hidetoshi Kosaki; Shinji Miwa

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[16a-D704-1~10] 10.3 Spin devices, magnetic memories and storages

Thu. Mar 16, 2023 9:15 AM - 12:00 PM D704 (Building No. 11)

Hiroaki Sukegawa(NIMS), Kenji Tanabe(Toyota Technol. Inst.)

10:15 AM - 10:30 AM

▲ [16a-D704-5] Influence of alkali halide insertions on magnetic anisotropy

〇(M1)Jieyi Chen¹, Shoya Sakamoto¹, Hidetoshi Kosaki¹, Shinji Miwa^1,2 (1.ISSP-UTokyo, 2.TSQS-UTokyo)

Keywords:Magnetoresistive random access memory, Perpendicular magnetic anisotropy, Magnetic multilayers

We inserted various alkali halide layers at the Fe/MgO interface and examined the contribution of electronegativity and spin-orbit interaction of anion atoms to perpendicular magnetic anisotropy.