[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)₂O₃ Thin Films Using Bromine Compounds

〇(M2)Eiji Kikuchi^1,2, Taisei Hattori³, Tomoki Otsuka³, Kentaro Kaneko² (1.Grad. Sch. Of Eng., Kyoto Univ., 2.Res. Org. Sci. & Tech., Ritsumeikan Univ., 3.Col. Of Sci. & Eng., Ritsumeikan Univ.)

Keywords:Gallium oxide, Iridium oxide, mist-CVD

We focus on α-(Ir,Ga)₂O₃ as a p-type semiconductor for gallium oxide devices because it has the same structure as α-Ga₂O₃ and a small lattice mismatch of 0.3% in α-(Ir,Ga)₂O₃/α-Ga₂O₃. However, low growth rate is an issue. For the purpose of high-speed growth, we used bromine compounds as raw materials in the mist CVD technique. As a result, α-(Ir,Ga)₂O₃ thin films were grown on the α-Ga₂O₃ buffer layer fabricated on a c-plane sapphire substrates. The growth rate was 870 nm/h, which is 17 times higher than the conventional growth rate.