[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

〇(D)Han XU¹, Tomohito Sudare^1,4, Yumie Miura^1,4, Ryo Nakayama^1,4, Ryota Shimizu¹, Naoomi Yamada², Kentaro Kaneko³, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Ritsumeikan Univ., 4.Univ. Tokyo)

Keywords:mist chemical vapor deposition, transparent conductive oxide

Niobium-doped anatase titanium dioxide (Ti_1−xNb_xO₂: TNO) has gained much attention due to its transparent conducting properties. The fabrication of TNO thin films has been mainly studied using vacuum physical vapor deposition (PVD). In this research, we applied mist chemical vapor deposition (mist-CVD), which is a high-throughput, scalable, cost-effective, and environmentally-friendly process, to fabricate TNO thin films.