[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-6] Reduction of carrier concentration in α-In₂O₃ films grown by Mist CVD and fabrication of MOSFET

〇Akito Taguchi¹, Shinri Yamadera¹, Takumi Yamamoto¹, Yuya Hayashi¹, Mamoru Murayama¹, Kotaro Ogawa¹, Tohru Honda¹, Takeyoshi Onuma¹, Kentaro Kaneko², Shinya Aikawa¹, Shizuo Fujita³, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Ritsumeikan Univ., 3.Kyoto Univ.)

Keywords:Mist CVD, indium oxide, MOSFET