[16a-PB01-1~2] 9.3 ナノエレクトロニクス

▲ [16a-PB01-2] High carrier transport based on perovskite quantum dots in perovskite matrix

〇(D)yongge yang、yusheng li、chao ding、shuzi hayase、qing shen

キーワード：carriers, quantum dots

Metal halide perovskite quantum dots (PQDs) have attracted a lot of attention due to their tunable direct band gap absorption and excellent emission properties in optoelectronic devices such as solar cells (SCs)^[1]. However, due to the presence of surface-insulating ligands, achieving high carrier transport in the active layer of the above-mentioned optoelectronic device is still difficult and cumbersome^[2]. Here, we report a direct synthesis PQDs quasi-ink with capped by conductive ligands, which exhibits enhanced coupling induced by quantum dot fusion. Moreover, In situ formation of a type-II heterostructure of PQDs in perovskite matrix with enhanced carrier separation and transport. Finally, the prepared films exhibit higher carrier transport capabilities (μ_e=1.40cm²V^-1S^-1,μ_h=0.68cm²V^-1S^-1) relative to conventional ligand exchange-treated quantum dot films (μ_e=0.15cm²V^-1S^-1,μ_h=0.06cm²V^-1S^-1).