[The 53rd Young Scientist Presentation Award Speech] Deep levels formed near the SiO<sub>2</sub>/SiC interface by thermal oxidation of SiC

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

Thu. Mar 16, 2023 4:00 PM - 5:30 PM A301 (Building No. 6)

Katsuhiro Kutsuki(Toyota Central R&D Labs.)

4:00 PM - 4:15 PM

〇Haruki Fujii¹, Kazutaka Kanegae¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, DLTS, MOSFET