4:15 PM - 4:30 PM
[16p-A301-8] Insight into thermal oxidation mechanism of 4H-SiC(0001) surface in CO2 ambient
Keywords:SiC, thermal oxidation, SiO2
Oral presentation
13 Semiconductors » 13.7 Compound and power devices, process technology and characterization
Thu. Mar 16, 2023 4:00 PM - 5:30 PM A301 (Building No. 6)
Katsuhiro Kutsuki(Toyota Central R&D Labs.)
4:15 PM - 4:30 PM
Keywords:SiC, thermal oxidation, SiO2