5:15 PM - 5:50 PM
[16p-A302-7] Additional Breakthrough Technology for Semiconductor Fabrication: Directed Self-assembly (DSA) and Sequential Infiltration Synthesis (SIS)
Keywords:Lithography, Directed Self-Assembly (DSA), Sequential Infiltration Synthesis (SIS)
The development of semiconductors with higher performance and larger capacity has been driven by lithography. Ultra-fine pattern resolution, lower Line Edge Roughness (LER), and high etch resistance are required. Directed Self-Assembly (DSA) and Sequential Infiltration Synthesis (SIS) have been investigated as such material technologies. The principles of DSA and SIS and their application in lithography will be described.