[16p-B401-1~13] 15.4 III-V-group nitride crystals

[16p-B401-3] [The 44th Young Scientist Award Speech] Low-threshold-current (~85 mA) AlGaN-based UV-B laser diode with refractive-index waveguide structure

〇Shunya Tanaka¹, Yuya Ogino¹, Kazuki Yamada¹, Reo Ogura¹, Shohei Teramura¹, Moe Shimokawa¹, Sakaya Ishizuka¹, Sho Iwayama^1,2, Kosuke Sato³, Hideto Miyake², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ., 2.Mie Univ., 3.Asahi Kasei)

Keywords:AlGaN, LD, UV

We report on a refractive-index waveguide AlGaN-based ultraviolet-B band (UV-B) laser diode grown on a sapphire substrate, which achieves a laser oscillation at a low threshold current (I_th), ~85 mA. The refractive index waveguide structure in a ridge-type structure is fabricated by a unique method combining dry inductively coupled plasma reactive ion etching and wet etching with tetramethylammonium hydroxide solution. Using this structure, the longitudinal-mode transverse optical confinement is successfully achieved, in which the ridge width is set to 3 μm, demonstrating a low I_th of UV-B laser diode.