[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

[16p-B409-3] Comparison of Temperature Characteristics of 1550nm-band Quantum Dot Lasers on InP(311)B Substrate with p-type Doping

〇Ryota Yabuki¹, Atsushi Matsumoto², Ryumi Katsuhara¹, Koichi Akahane², Siim Heinsalu¹, Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT)

Keywords:Quantum-Dot, Semiconductor laser diode, Temperature Characteristics

We fabricated QD-LDs(Quantum-Dot Laser Diodes) with 1550-nm band InAs/InGaAlAs quantum dots grown on an InP(311)B substrate by strain compensation technique and evaluated their temperature characteristics. In this study, to improve the temperature characteristics, we doped a high concentration of p-type acceptors into the barrier layer and realized the devices with high temperature stability. Also, we compared the temperature characteristics by doping concentration and by the number of QD layers, respectively.