Poster presentation

[16a-PA07-1~2] 3.12 Semiconductor optical devices (formerly 3.13)

Thu. Mar 16, 2023 9:30 AM - 11:30 AM PA07 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-PA07-1] 1.5 µm wavelength range InP-based photonic crystal surface emitting lasers

〇Masahiro Hitaka¹, Akio Ito¹, Tadataka Edamura¹ (1.HPK CRL)

9:30 AM - 11:30 AM

[16a-PA07-2] Verification of the ultimate response time (~ 1 ps) in quantum cascade detectors

〇Tatsuo Dougakiuchi¹, Akio Ito¹, Masahiro Hitaka¹, Kazuue Fujita¹, Tadataka Edamura¹ (1.HPK CRL)

Oral presentation

[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

Thu. Mar 16, 2023 1:30 PM - 4:00 PM B409 (Building No. 2)

Masakazu Arai(Univ. of Miyazaki), Gu Xiaodong(Tokyo Institute of Technology)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

▲ [16p-B409-1] [The 44th Paper Award Speech] Insights into the utilization of porous semiconductors for strain-relieved semiconductor layers

〇Shubhra Shweta Pasayat¹ (1.Univ. of Wisconsin-Madison)

2:00 PM - 2:15 PM

[16p-B409-2] Photoluminescence Intensity dependence of InGaAs MQW on Relaxation Layer Composition

〇Kazuki Usui¹, Koki Hombu¹, Hidetosi Suzuki¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

2:15 PM - 2:30 PM

[16p-B409-3] Comparison of Temperature Characteristics of 1550nm-band Quantum Dot Lasers on InP(311)B Substrate with p-type Doping

〇Ryota Yabuki¹, Atsushi Matsumoto², Ryumi Katsuhara¹, Koichi Akahane², Siim Heinsalu¹, Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT)

2:30 PM - 2:45 PM

[16p-B409-4] Temperature Dependence of Emission Wavelength in Highly-stacked Quantum Dot Laser Fabricated on InP(311)B Substrate with Bi Atom Irradiation

〇Satoshi Yanase^1,2, Kouichi Akahane², Atsushi Matsumoto², Toshimasa Umezawa², Naokatsu Yamamoto², Yoriko Tominaga³, Atsushi Kanno^2,4, Tomohiro Maeda^1,2, Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT, 3.Hiroshima Univ., 4.Nagoya Inst. of Tech.)

3:00 PM - 3:15 PM

[16p-B409-5] Low Threshold 1.55 um-Band Quantum Dot DFB Laser

〇Atsushi Matsumoto¹, Shinya Nakajima¹, Ryumi Katsuhara², Ryota Yabuki², Toshimasa Umezawa¹, Yuichi Matsushima², Katsuyuki Utaka², Kouichi Akahane¹ (1.NICT, 2.Waseda Univ.)

3:15 PM - 3:30 PM

[16p-B409-6] Fabrication of InP-based Membrane Lasers on Diamond with Transfer Printing

〇(M1)Takumi Sato¹, Yoshiho Maeda², Takuma Aihara², Takuro Fujii², Suguru Yamaoka², Tatsuro Hiraki², Koji Takeda², Toru Segawa², Satoshi Iwamoto³, Yasuhiko Arakawa⁴, Shinji Matsuo², Yasutomo Ota¹ (1.Keio Univ., 2.NTT Device Technology Labs., 3.RCAST, the Univ. of Tokyo, 4.Nanoquine, the Univ. of Tokyo)

3:30 PM - 3:45 PM

[16p-B409-7] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate(II)

〇Liang Zhao¹, Koji Agata¹, Shingo Ito¹, Ryosuke Yada¹, ZHANG JUNYU¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

3:45 PM - 4:00 PM

[16p-B409-8] Multiple proton ion-implantation characteristics for lateral-direction electro absorption modulators

〇(M2)Kairi Atsugi¹, Huang Haidong¹, Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ.)

Oral presentation

[17a-A303-1~6] 3.12 Semiconductor optical devices (formerly 3.13)

Fri. Mar 17, 2023 9:30 AM - 11:30 AM A303 (Building No. 6)

Toshimasa Umezawa(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

▼ [17a-A303-1] The importance of sidewall conditions on the performance of micro-LEDs

〇(PC)Jeonghwan Park^1,2, Markus Pristovsek³, Wentao Cai¹, Heajeong Cheong², Atsushi Tanaka³, Yuta Furusawa³, Dong-Pyo Han⁴, Tae-Yeon Seong⁵, Hiroshi Amano^1,2,3 (1.Nagoya Univ., 2.VBL Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Hanyang Univ., 5.Korea Univ.)

9:45 AM - 10:00 AM

▲ [17a-A303-2] Integrated module of LED array based optical wireless power transmission system

〇Mingzhi Zhao¹, Tomoyuki Miyamoto¹ (1.Tokyo Institute of Technology)

10:00 AM - 10:15 AM

[17a-A303-3] 10kV Class SiC Photoconductive Switch for Particle Accelerator

〇Taisuke Kawasaki¹, Hiromasa Yasuda¹, Vincent Yahia^3,2, Mitsuhiro Yoshida^4,3, Takunori Taira^2,3, Hisashi Yoshida⁵, Shigeya Kimura⁵, Chiharu Ota⁵, Hisao Miyazaki⁵ (1.Toshiba Energy Systems & Solutions Co., 2.RIKEN, 3.IMS, 4.KEK, 5.Toshiba Co.)

10:30 AM - 11:00 AM

[17a-A303-4] [The 24th Optics and Quantum Electronics Achievement Award Speech] Engineering research on Quantum Cascade Lasers and its development to room temperature terahertz semiconductor source

〇Kazuue Fujita¹ (1.Hamamatsu Photonics Central Research Lab)

11:00 AM - 11:15 AM

△ [17a-A303-5] Characterization of InGaAs Schottky Photodiodes with In₂O₃-based SWIR Transparent Conductive Oxide (TCO)

〇(DC)Hiroto Ishii^1,2, Kazuaki Oishi^1,2, Takashi Koida², Tetsuji Shimizu², Hiroyuki Ishii², Wen Hsin Chang², Akira Endoh¹, Hiroki Fujishiro¹, Tatsuro Maeda^1,2 (1.TUS, 2.AIST)

11:15 AM - 11:30 AM

[17a-A303-6] Microscopic carrier distribution imaging of black silicon solar cell by scanning nonlinear dielectric microscopy

〇Yasuo Cho¹, Beniamino Iandolo², Ole Hansen² (1.Tohoku Univ., 2.Tech. Univ. Denmark)

Sessions

3 Optics and Photonics » 3.12 Semiconductor optical devices (formerly 3.13)

[16a-PA07-1~2] 3.12 Semiconductor optical devices (formerly 3.13)

[16a-PA07-1] 1.5 µm wavelength range InP-based photonic crystal surface emitting lasers

[16a-PA07-2] Verification of the ultimate response time (~ 1 ps) in quantum cascade detectors

[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

▲ [16p-B409-1] [The 44th Paper Award Speech] Insights into the utilization of porous semiconductors for strain-relieved semiconductor layers

[16p-B409-2] Photoluminescence Intensity dependence of InGaAs MQW on Relaxation Layer Composition

[16p-B409-3] Comparison of Temperature Characteristics of 1550nm-band Quantum Dot Lasers on InP(311)B Substrate with p-type Doping

[16p-B409-4] Temperature Dependence of Emission Wavelength in Highly-stacked Quantum Dot Laser Fabricated on InP(311)B Substrate with Bi Atom Irradiation

[16p-B409-5] Low Threshold 1.55 um-Band Quantum Dot DFB Laser

[16p-B409-6] Fabrication of InP-based Membrane Lasers on Diamond with Transfer Printing

[16p-B409-7] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate(II)

[16p-B409-8] Multiple proton ion-implantation characteristics for lateral-direction electro absorption modulators

[17a-A303-1~6] 3.12 Semiconductor optical devices (formerly 3.13)

▼ [17a-A303-1] The importance of sidewall conditions on the performance of micro-LEDs

▲ [17a-A303-2] Integrated module of LED array based optical wireless power transmission system

[17a-A303-3] 10kV Class SiC Photoconductive Switch for Particle Accelerator

[17a-A303-4] [The 24th Optics and Quantum Electronics Achievement Award Speech] Engineering research on Quantum Cascade Lasers and its development to room temperature terahertz semiconductor source

△ [17a-A303-5] Characterization of InGaAs Schottky Photodiodes with In₂O₃-based SWIR Transparent Conductive Oxide (TCO)

[17a-A303-6] Microscopic carrier distribution imaging of black silicon solar cell by scanning nonlinear dielectric microscopy

Authenticate

Sessions

3 Optics and Photonics » 3.12 Semiconductor optical devices (formerly 3.13)

[16a-PA07-1~2] 3.12 Semiconductor optical devices (formerly 3.13)

[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

▲ [16p-B409-1] [The 44th Paper Award Speech] Insights into the utilization of porous semiconductors for strain-relieved semiconductor layers

[17a-A303-1~6] 3.12 Semiconductor optical devices (formerly 3.13)

▼ [17a-A303-1] The importance of sidewall conditions on the performance of micro-LEDs

▲ [17a-A303-2] Integrated module of LED array based optical wireless power transmission system

△ [17a-A303-5] Characterization of InGaAs Schottky Photodiodes with In2O3-based SWIR Transparent Conductive Oxide (TCO)

Authenticate

△ [17a-A303-5] Characterization of InGaAs Schottky Photodiodes with In₂O₃-based SWIR Transparent Conductive Oxide (TCO)