[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

[16p-B409-7] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate(II)

〇Liang Zhao¹, Koji Agata¹, Shingo Ito¹, Ryosuke Yada¹, ZHANG JUNYU¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:Optical waveguide, Silicon photonics, Simulation

In order to achieve high-speed, large-capacity communication in large-scale integrated circuits with low power consumption, integration of InP-based optical devices on Si substrates has been actively studied. In contrast, we have proposed a method to integrate and fabricate optical devices by bonding thin InP and Si substrates by direct bonding, and growing InP-based crystals on this InP/Si substrate. .
This time, we simulated the waveguide loss due to surface defects generated in InP/Si substrate fabrication with COMSOL, calculated the optical loss factor, and calculated the threshold current density of the quantum well laser.