The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[16p-B410-1~8] 13.8 Optical properties and light-emitting devices

Thu. Mar 16, 2023 1:30 PM - 3:30 PM B410 (Building No. 2)

Ariyuki Kato(Nagaoka Univ. of Tech.), Takayuki Nakanishi(NIMS)

1:30 PM - 1:45 PM

[16p-B410-1] Emission Properties of La2Hf2O7 doped with Yb as a NIR-emitting Oxide Scintillator for the Remote Dosimetry System

〇(PC)Satoshi Ishizawa1, Shunsuke Kurosawa1,2,3, Kurashima Yutaro1, Akihiro Yamaji1,2, Akira Yoshikawa1,2,3,4, Takushi Takata5, Hiroki Tanaka5 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ, 3.ILE Osaka Univ., Osaka Univ., 4.C&A Corporation, 5.KURNS, Kyoto Univ.)

Keywords:Near-Infrared-Emitting Oxide Scintillator, rare earth element

We developed La2Hf2O7 doped with Yb (Yb:LHO) crystal as near-infrared emitting oxide scintillator by Core heating method. Stopping power of Yb:LHO for γ-rays is superior to that of existing scintillator elements for remote dosimetry system used in high dose rate region, e.g. decommissioning of nuclear power plant. In this talk, we will report the results of investigation for Yb:LHO scintillator, including its composition and emission properties.