The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[16p-D419-1~18] 10.2 Fundamental and exploratory device technologies for spin

Thu. Mar 16, 2023 1:30 PM - 6:30 PM D419 (Building No. 11)

Kihiro Yamada(Tokyo Tech.), Weinan Zhou(NIMS), Takumi Yamazaki(Tohoku Univ.)

1:30 PM - 1:45 PM

[16p-D419-1] Large anomalous Nernst effects in Ge-doped Co thin films

〇(M1)Takuya Tsujimoto1, Takeshi Fujita2, Toshio Miyamachi1, Masaki Mizuguchi1 (1.Nagoya Univ., 2.Kochi Univ. Tech.)

Keywords:spintronics, spin caloritronics, the Anomalous Nernst effect

The anomalous Nernst effect (ANE) is expected as the new energy harvesting technology. The effect is defined as a generation of an electric field in the vertical direction to the magnetization of the sample and the applied temperature gradient. To realize the ANE devices, searching materials which have large ANE conversion efficiency and studying the thermoelectric transport property have attracted significant attention. In this study, we found that Ge doped Co thin films have large ANE compared to pure Co thin films and researched the mechanism of enhancement of ANE in CoGe thin films.