[16p-D505-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [16p-D505-4] Modulation of DC resistance change of Ag-Ge-Sb-Te based CBRAMs by RF input

〇(DC)Yifei Yin¹, Keito Tsukamoto¹, Hitoshi Hayashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:CBRAMs that RF waves can be inputted, Amorphous chalcogenide semiconductors, Ag-Ge-Te based

Electrochemical diffusion in which active metal ions such as Ag move in amorphous chalcogenide semiconductors has been studied not only as an interesting physical phenomenon but also for a wide range of applications such as memories and sensors. The Ag filament shape depends on complex material parameters such as electrochemical reaction, diffusion and the growth mechanism which is important for understanding the CBRAM mechanism. We have developed an Ag-Ge-Te based CBRAM that RF waves can be inputted, and have evaluated the characteristic changes in CBRAMs with the RF input. In this study, we found qualitatively different RF frequency dependences of resistance in Ag-GeTe (dendritic filament) and Ag-Ge2Sb2.5Te5 (sheet-like filament).