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△ [16p-D505-7] Phase transition of a MnTe thin film induced by sub-bandgap single-femtosecond excitation
Keywords:MnTe, phase change material, femtosecond laser
Recently, phase-change random-access memory has attracted attention as a memory that can process data at high speed. The use of MnTe as a material for this memory is expected to realize energy-saving and high-speed operation.
In this study, β-phase MnTe thin films were irradiated with a single femtosecond laser pulse at 800 nm to induce a phase transition to the α-phase. As a result, a large difference in contrast was observed at the irradiated area, and Raman peaks due to the E2g phonon mode of α-MnTe were identified.
In this study, β-phase MnTe thin films were irradiated with a single femtosecond laser pulse at 800 nm to induce a phase transition to the α-phase. As a result, a large difference in contrast was observed at the irradiated area, and Raman peaks due to the E2g phonon mode of α-MnTe were identified.