[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1] Growth temperature dependence of Ga₂O₃ growth on ScAlMgO₄ by mist CVD

〇Soma Kato¹, Syuhei Yamashita¹, Yuichi Wada¹, Hitoshi Takane³, Yuto Yamafuji¹, Junjiro Kikawa¹, Makoto Matsukura⁴, Takahiro Kojima⁴, Takashi Shinohe⁵, Momoko Deura², Kentaro Kaneko³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST, 4.OXIDE Co., 5.FLOSFIA Inc.)

Keywords:semiconductor, Ga2O3, SAM substrate

The extremely low thermal conductivity of Ga₂O₃ can be overcome by growing Ga₂O₃ thin films on ScAlMgO₄(SAM) substrates with strong c-plane cleavage, which can be easily detached from the substrate to improve heat dissipation problems. Previously, we showed that stable β-Ga₂O₃ could be obtained by growing Ga₂O₃ on SAM substrates at 500-700 °C using mist CVD followed by annealing at 800-900 °C. In this study, Ga₂O₃ was grown on SAM substrates at higher temperatures by mist CVD. We investigated whether β-Ga₂O₃ could be obtained by growth alone.