[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-1] Two-dimensional characterization of Au/Ni/p⁺-SiC Schottky contacts by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Hitose Sawazaki¹, Haruto Yoshimura¹, Natsuki Ito¹, Masashi Kato², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Nagoya Inst. Tech.)

Keywords:Scanning Internal Photoemission Spectroscopy, p-SiC, Two-dimensional Characterization

We have originally developed Scanning internal photoemission microscopy (SIPM) for two-dimensional characterization of the electrical properties of metal/semiconductor interfaces. We have evaluated the uniformity of the Schottky barrier height of n-SiC, n-GaN, n-α-Ga₂O₃ Schottky contacts so far. In this study, we evaluated the uniformity of the p⁺-SiC layers, which has been rarely reported.