<em>Ab initio</em> study for orientation dependence of band alignments at 4H-SiC/SiO<sub>2</sub> interface

Shun Matsuda; Toru Akiyama; Tetsuo Hatakeyama; Kenji Shiraishi; Takashi Nakayama

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Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

Thu. Mar 16, 2023 1:30 PM - 3:30 PM PA04 (Poster)

1:30 PM - 3:30 PM

[16p-PA04-2] Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO₂ interface

〇(M1)Shun Matsuda¹, Toru Akiyama¹, Tetsuo Hatakeyama², Kenji Shiraishi³, Takashi Nakayama⁴ (1.Mie Univ., 2.Toyama Pref. Univ., 3.Nagoya Univ., 4.Chiba Univ.)

Keywords:SiC, First Principles Calculation

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Presentation information

[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-2] Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO2 interface

[16p-PA04-2] Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO₂ interface